BSIM4 Model Updated: A new 4.1.2 version of BSIM4 has been incorporated in the ICAP/4Windows software family. Improvements include the addition of “Gate Induced Source Leakage” (GISL) to provide a significant improvement in simulation convergence, plus select “clean-up” of the code for more efficient operation. Together, the enhancements make the gate induced leakage component of the substrate current symmetric. Intusoft’s collection of BSIM MOSFET and EKV models are advantageous for the simulation of ICs and low-voltage/current analog and mixed-signal design using submicron CMOS technology. The BSIM4 model is not found in PSPICE.